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Title: Effect of antimony on the deep-level traps in GaInNAsSb thin films

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41‚ÄČeV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.
Authors:
; ; ;  [1] ; ;  [2]
  1. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan)
  2. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
Publication Date:
OSTI Identifier:
22303511
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; ENERGY LEVELS; EV RANGE; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INTERFACES; LAYERS; NITROGEN COMPOUNDS; SPECTROSCOPY; THIN FILMS; TRAPS