Effect of antimony on the deep-level traps in GaInNAsSb thin films

Journal Article · Mon Sep 15 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4895940· OSTI ID:22303511

Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka ^[1]; Sakurai, Takeaki; Akimoto, Katsuhiro ^[2]

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1. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan)
2. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

• OSTI ID: 22303511
• Journal Information: Applied Physics Letters, Vol. 105, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CRYSTAL DEFECTS
ELECTRIC POTENTIAL
ENERGY LEVELS
EV RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INTERFACES
LAYERS
NITROGEN COMPOUNDS
SPECTROSCOPY
THIN FILMS
TRAPS