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Title: Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.
Authors:
; ; ;  [1]
  1. ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
22303510
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ANNEALING; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDES; INDIUM COMPOUNDS; LAYERS; LOSSES; NITROGEN COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PASSIVATION; SILICON NITRIDES; STABILITY; SURFACES; VAPOR PHASE EPITAXY