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Title: Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

The oxygen precipitation of highly (17.5 mΩ cm) and moderately (4.5 Ω cm) boron (B) doped silicon (Si) crystals at 780 °C is investigated by following in-situ the evolution of diffraction Pendellösung oscillations. All samples show an initial diffusion-driven growth process which may change over into Ostwald ripening. For the highly doped sample and involving a nucleation step at 450 °C for 30 h, the precipitate density ρ is enhanced by a factor of 8 as compared to the moderately doped sample. The influence of a high B concentration on ρ is dramatically higher for the samples directly heated to 780 °C, where an enhancement factor of 80 is found. Considering Ostwald ripening as a second growth regime reveals consistent ripening rates and surface energies σ with those found at 900 °C in a previous publication.
Authors:
; ; ; ;  [1]
  1. Crystallography and Structural Physics, University of Erlangen-Nürnberg, Staudtstr. 3, 91058 Erlangen (Germany)
Publication Date:
OSTI Identifier:
22303502
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON ADDITIONS; CRYSTAL GROWTH; CRYSTALS; DENSITY; DIFFUSION; DOPED MATERIALS; OXYGEN; PRECIPITATION; SILICON; SURFACE ENERGY; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION