Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene
- IV. Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen (Germany)
- II. Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen (Germany)
- Department of Condensed Matter Physics and Materials' Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India)
We perform a structural analysis of nitrogen-doped graphene on SiC(0001) prepared by ultra low-energy ion bombardment. Using scanning tunneling microscopy, we show that nitrogen atoms are incorporated almost exclusively as graphitic substitution in the graphene honeycomb lattice. With an irradiation energy of 25 eV and a fluence of approximately 5 × 10{sup 14 }cm{sup −2}, we achieve a nitrogen content of around 1%. By quantitatively comparing the position of the N-atoms in the topography measurements with simulated random distributions, we find statistically significant short-range correlations. Consequently, we are able to show that the dopants arrange preferably at lattice sites given by the 6 × 6-reconstruction of the underlying substrate. This selective incorporation is most likely triggered by adsorbate layers present during the ion bombardment. This study identifies low-energy ion irradiation as a promising method for controlled doping in epitaxial graphene.
- OSTI ID:
- 22303499
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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