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Title: Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes

We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700 K have been derived at a current density of 45 A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.
Authors:
;  [1] ; ;  [2]
  1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
  2. OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg (Germany)
Publication Date:
OSTI Identifier:
22303494
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; COLOR; CURRENT DENSITY; CURRENTS; EMISSION; EQUIPMENT; GALLIUM NITRIDES; INDIUM COMPOUNDS; INJECTION; LAYERS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PLASMA; QUANTUM DOTS; VISIBLE RADIATION; WAVELENGTHS