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Title: Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.
Authors:
; ; ; ; ; ;  [1]
  1. Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg (Germany)
Publication Date:
OSTI Identifier:
22303488
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CRYSTAL GROWTH; EXCITATION; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; PLASMA; POWER DENSITY; QUANTUM EFFICIENCY; QUANTUM WELLS; SPECTROSCOPY; STARK EFFECT; TEMPERATURE RANGE 0273-0400 K; VAPOR PHASE EPITAXY