Carrier redistribution between different potential sites in semipolar (202{sup ¯}1) InGaN quantum wells studied by near-field photoluminescence

Journal Article · Mon Sep 15 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896034· OSTI ID:22303486

Marcinkevičius, S. ^[1]; Gelžinytė, K. ^[1]; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S. ^[2]

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1. Department of Materials and Nano Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista (Sweden)
2. Materials Department, University of California, Santa Barbara, California 93106 (United States)

Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202{sup ¯}1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202{sup ¯}1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

• OSTI ID: 22303486
• Journal Information: Applied Physics Letters, Vol. 105, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER DENSITY
CARRIERS
DIFFUSION
EXCITATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
RECOMBINATION
SPECTROSCOPY