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Title: Microscopic origin of low frequency noise in MoS{sub 2} field-effect transistors

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS{sub 2}) field-effect transistors in multiple device configurations including MoS{sub 2} on silicon dioxide as well as MoS{sub 2}-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO{sub 2} interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS{sub 2} contacts also play a significant role in determining noise magnitude in these devices.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Physics, Indian Institute of Science, Bangalore 560 012 (India)
  2. Solid State Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012 (India)
Publication Date:
OSTI Identifier:
22303423
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BORON NITRIDES; DENSITY; FIELD EFFECT TRANSISTORS; MOLYBDENUM SULFIDES; SILICA; SILICON OXIDES