Low temperature photoresponse of monolayer tungsten disulphide
Abstract
High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay–rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization.
- Authors:
-
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371 (Singapore)
- Publication Date:
- OSTI Identifier:
- 22303416
- Resource Type:
- Journal Article
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; EQUIPMENT; TEMPERATURE RANGE 0065-0273 K; TUNGSTEN
Citation Formats
Cao, Bingchen, Shen, Xiaonan, Shang, Jingzhi, Cong, Chunxiao, Yang, Weihuang, Eginligil, Mustafa, Yu, Ting, Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542, and Graphene Research Centre, National University of Singapore, Singapore, 117546. Low temperature photoresponse of monolayer tungsten disulphide. United States: N. p., 2014.
Web. doi:10.1063/1.4900816.
Cao, Bingchen, Shen, Xiaonan, Shang, Jingzhi, Cong, Chunxiao, Yang, Weihuang, Eginligil, Mustafa, Yu, Ting, Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542, & Graphene Research Centre, National University of Singapore, Singapore, 117546. Low temperature photoresponse of monolayer tungsten disulphide. United States. https://doi.org/10.1063/1.4900816
Cao, Bingchen, Shen, Xiaonan, Shang, Jingzhi, Cong, Chunxiao, Yang, Weihuang, Eginligil, Mustafa, Yu, Ting, Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542, and Graphene Research Centre, National University of Singapore, Singapore, 117546. 2014.
"Low temperature photoresponse of monolayer tungsten disulphide". United States. https://doi.org/10.1063/1.4900816.
@article{osti_22303416,
title = {Low temperature photoresponse of monolayer tungsten disulphide},
author = {Cao, Bingchen and Shen, Xiaonan and Shang, Jingzhi and Cong, Chunxiao and Yang, Weihuang and Eginligil, Mustafa and Yu, Ting and Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542 and Graphene Research Centre, National University of Singapore, Singapore, 117546},
abstractNote = {High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay–rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization.},
doi = {10.1063/1.4900816},
url = {https://www.osti.gov/biblio/22303416},
journal = {APL Materials},
issn = {2166-532X},
number = 11,
volume = 2,
place = {United States},
year = {Sat Nov 01 00:00:00 EDT 2014},
month = {Sat Nov 01 00:00:00 EDT 2014}
}
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