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Title: Growth and characterization of horizontal GaN wires on silicon

We report the growth of in-plane GaN wires on silicon by metalorganic chemical vapor deposition. Triangular-shaped GaN microwires with semi-polar sidewalls are observed to grow on top of a GaN/Si template patterned with nano-porous SiO{sub 2}. With a length-to-thickness ratio ∼200, the GaN wires are well aligned along the three equivalent 〈 112{sup ¯}0 〉 directions. Micro-Raman measurements indicate negligible stress and a low defect density inside the wires. Stacking faults were found to be the only defect type in the GaN wire by cross-sectional transmission electron microscopy. The GaN wires exhibited high conductivity, and the resistivity was 20–30 mΩ cm, regardless of the wire thickness. With proper heterostructure and doping design, these highly aligned GaN wires are promising for photonic and electronic applications monolithically integrated on silicon.
Authors:
;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [5] ; ;  [6]
  1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon (Hong Kong)
  2. (Hong Kong)
  3. Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  4. HKUST Jockey Club Institute for Advanced Study, The Hong Kong University of Science and Technology, Kowloon (Hong Kong)
  5. (United States)
  6. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22303398
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEFECTS; DENSITY; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; POROUS MATERIALS; RAMAN EFFECT; SILICA; SILICON; SILICON OXIDES; STACKING FAULTS; STRESSES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; WIRES