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Title: Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.
Authors:
 [1] ;  [2]
  1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China)
  2. Institute of Solid State Physics, Ulm University, D-89069 Ulm (Germany)
Publication Date:
OSTI Identifier:
22303395
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CARRIER MOBILITY; CRYSTAL GROWTH; CUBIC LATTICES; DIAMONDS; DOPED MATERIALS; ELECTRONIC EQUIPMENT; EPITAXY; FILMS; INTERFACES; LAYERS; MONOCRYSTALS; SEGREGATION; SILICON ADDITIONS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 1000-4000 K; THICKNESS