Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Journal Article · Mon Jun 23 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4885835· OSTI ID:22303395

Ziemann, P. ^[1]

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1. Institute of Solid State Physics, Ulm University, D-89069 Ulm (Germany)

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

• OSTI ID: 22303395
• Journal Information: Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON NITRIDES
CARRIER MOBILITY
CRYSTAL GROWTH
CUBIC LATTICES
DIAMONDS
DOPED MATERIALS
ELECTRONIC EQUIPMENT
EPITAXY
FILMS
INTERFACES
LAYERS
MONOCRYSTALS
SEGREGATION
SILICON ADDITIONS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 1000-4000 K
THICKNESS