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Title: Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide

Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3 × 90 μm in dimensions) ensures 98 % and 99 % transmission efficiency at ∼1.55 μm in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99 % transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings. (integrated optical waveguides)
Authors:
;  [1]
  1. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22303389
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 43; Journal Issue: 8; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; COMPUTERIZED SIMULATION; EFFICIENCY; LIGHT TRANSMISSION; POLYMERS; SILICON; TUNNEL EFFECT; WAVEGUIDES