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Title: 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

This paper describes 1.55-μm pulsed laser diode bars based on epitaxially stacked double AlGaInAs/InP heterostructures. The output power of such bars is 1.8 times that of singleheterostructure laser diode bars. We present the key characteristics of the laser sources. (lasers)
Authors:
; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22303365
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 43; Journal Issue: 9; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; EPITAXY; INDIUM PHOSPHIDES; LASERS; PARTICLE PRODUCTION; PULSES