1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

Journal Article · Mon Sep 30 00:00:00 EDT 2013 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2013V043N09ABEH015283· OSTI ID:22303365

Gorlachuk, P V; Ryaboshtan, Yu L; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Kurnosov, V D; Kurnosov, K V; Zhuravleva, O V; Romantsevich, V I; Chernov, R V; Ivanov, A V; Simakov, V A ^[1]

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1. Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)

This paper describes 1.55-μm pulsed laser diode bars based on epitaxially stacked double AlGaInAs/InP heterostructures. The output power of such bars is 1.8 times that of singleheterostructure laser diode bars. We present the key characteristics of the laser sources. (lasers)

• OSTI ID: 22303365
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 43, Issue 9; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
EPITAXY
INDIUM PHOSPHIDES
LASERS
PARTICLE PRODUCTION
PULSES