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Title: High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range 1.5 – 1.6 μm. We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures. (lasers)
Authors:
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  1. Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22303364
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 43; Journal Issue: 9; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AUGMENTATION; LASERS; LAYERS; LOSSES; PULSES; QUANTUM EFFICIENCY; WAVEGUIDES