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Title: Anisotropy of the solid-state epitaxy of silicon carbide in silicon

A new method for the solid-state synthesis of epitaxial layers is developed, in which a substrate participates in the chemical reaction and the reaction product grows not on the substrate surface, as in traditional epitaxial methods, but inside the substrate. This method offers new opportunities for elastic-energy relaxation due to a mechanism operating only in anisotropic media, specifically, the attraction of point defects formed during the chemical reaction. The attracting point centers of dilatation form relatively stable objects, dilatation dipoles, which significantly reduce the total elastic energy. It is shown that, in crystals with cubic symmetry, the most favorable arrangement of dipoles is the 〈111〉 direction. The theory is tested by growing silicon carbide (SiC) films on Si (111) substrates by chemical reaction with carbon monoxide CO. High-quality single-crystal SiC-4H films with thicknesses of up to 100 nm are grown on Si (111). Ellipsometric analysis showed that the optical constants of the SiC-4H films are significantly anisotropic. This is caused not only by the lattice hexagonality but also by a small amount (about 2–6%) of carbon atoms remaining in the film due to dilatation dipoles. It is shown that the optical constants of the carbon impurity correspond to strongly anisotropicmore » highly oriented pyrolytic graphite.« less
Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Problems of Machine Science (Russian Federation)
Publication Date:
OSTI Identifier:
22300431
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ANISOTROPY; CARBON MONOXIDE; DIPOLES; EPITAXY; FILMS; GRAPHITE; MONOCRYSTALS; POINT DEFECTS; SILICON; SILICON CARBIDES; SUBSTRATES; SYNTHESIS; THICKNESS