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Title: Lateral photoconductivity in structures with Ge/Si quantum dots

The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.
Authors:
; ; ; ; ; ;  [1] ; ;  [2] ;  [3] ;  [4]
  1. St. Petersburg State Polytechnical University (Russian Federation)
  2. Max Planck Institute of Microstructure Physics (Germany)
  3. Interdisziplinäres Zentrum für Materialwissenschaften (IZM), Martin-Luther-Universität Halle-Wittenberg (Germany)
  4. Institut für Physik, Martin-Luther-Universität Halle-Wittenberg (Germany)
Publication Date:
OSTI Identifier:
22300426
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; BOUND STATE; GROUND STATES; PHOTOCONDUCTIVITY; POLARIZATION; QUANTUM DOTS; SPECTRA; SURFACES