Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots
Abstract
The effect of the incorporation of an InGaAs quantum well into structures with InAs/GaAs quantum dots grown by gas-phase epitaxy on their optoelectronic properties is analyzed in the mode with increased growth-interruption time. It is established that the quantum-dot energy spectrum is weakly sensitive to variations in the thickness and composition of the double InGaAs/GaAs coating layer. The deposition of a quantum well onto a layer of quantum dots decreases the emission-barrier effective height in them. The conditions under which the quantum well can be used for protecting the quantum-dot active layer against penetration by defects generated during structure-surface anodic oxidation are determined.
- Authors:
-
- Lobachevskii Nizhni Novgorod State University (Russian Federation)
- Publication Date:
- OSTI Identifier:
- 22300424
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 47; Journal Issue: 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEFECTS; DEPOSITION; ENERGY SPECTRA; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; OXIDATION; QUANTUM DOTS; QUANTUM WELLS; THICKNESS
Citation Formats
Volkova, N. S., E-mail: volkovans88@mail.ru, Gorshkov, A. P., Zdoroveishchev, A. V., Vikhrova, O. V., and Zvonkov, B. N. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots. United States: N. p., 2013.
Web. doi:10.1134/S106378261312021X.
Volkova, N. S., E-mail: volkovans88@mail.ru, Gorshkov, A. P., Zdoroveishchev, A. V., Vikhrova, O. V., & Zvonkov, B. N. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots. United States. https://doi.org/10.1134/S106378261312021X
Volkova, N. S., E-mail: volkovans88@mail.ru, Gorshkov, A. P., Zdoroveishchev, A. V., Vikhrova, O. V., and Zvonkov, B. N. 2013.
"Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots". United States. https://doi.org/10.1134/S106378261312021X.
@article{osti_22300424,
title = {Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots},
author = {Volkova, N. S., E-mail: volkovans88@mail.ru and Gorshkov, A. P. and Zdoroveishchev, A. V. and Vikhrova, O. V. and Zvonkov, B. N.},
abstractNote = {The effect of the incorporation of an InGaAs quantum well into structures with InAs/GaAs quantum dots grown by gas-phase epitaxy on their optoelectronic properties is analyzed in the mode with increased growth-interruption time. It is established that the quantum-dot energy spectrum is weakly sensitive to variations in the thickness and composition of the double InGaAs/GaAs coating layer. The deposition of a quantum well onto a layer of quantum dots decreases the emission-barrier effective height in them. The conditions under which the quantum well can be used for protecting the quantum-dot active layer against penetration by defects generated during structure-surface anodic oxidation are determined.},
doi = {10.1134/S106378261312021X},
url = {https://www.osti.gov/biblio/22300424},
journal = {Semiconductors},
issn = {1063-7826},
number = 12,
volume = 47,
place = {United States},
year = {Sun Dec 15 00:00:00 EST 2013},
month = {Sun Dec 15 00:00:00 EST 2013}
}
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