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Title: Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots

The effect of the incorporation of an InGaAs quantum well into structures with InAs/GaAs quantum dots grown by gas-phase epitaxy on their optoelectronic properties is analyzed in the mode with increased growth-interruption time. It is established that the quantum-dot energy spectrum is weakly sensitive to variations in the thickness and composition of the double InGaAs/GaAs coating layer. The deposition of a quantum well onto a layer of quantum dots decreases the emission-barrier effective height in them. The conditions under which the quantum well can be used for protecting the quantum-dot active layer against penetration by defects generated during structure-surface anodic oxidation are determined.
Authors:
; ; ; ;  [1]
  1. Lobachevskii Nizhni Novgorod State University (Russian Federation)
Publication Date:
OSTI Identifier:
22300424
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEFECTS; DEPOSITION; ENERGY SPECTRA; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; OXIDATION; QUANTUM DOTS; QUANTUM WELLS; THICKNESS