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Title: Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer

Using high-resolution transmission electron microscopy and photoelectric spectroscopy methods, the effect of Mn δ layer embedding and GaAs coating layer growth techniques in structures with In(Ga)As/GaAs quantum dots and wells on their structural and optoelectronic characteristics is studied. It is shown that the low-temperature GaAs coating layer in a structure with a Mn δ layer is structurally inhomogeneous and can cause a decrease in the quantum-dot photosensitivity.
Authors:
; ; ; ;  [1]
  1. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22300423
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM ARSENIDES; LAYERS; PHOTOSENSITIVITY; QUANTUM DOTS; QUANTUM WELLS; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY