skip to main content

SciTech ConnectSciTech Connect

Title: Simulation of the absorption of a femtosecond laser pulse in crystalline silicon

The effect of the nonlinearity of the absorptivity and absorption coefficient on the process of the intense photoexcitation of silicon is studied on the basis of a model of the two-photon excitation of a semiconductor with consideration for external emission. Correlation between the results of simulation of the absorption of a femtosecond laser pulse in single-crystal silicon and experimental data under conditions of the femtosecond excitation of surface plasmon polaritons makes it possible to refine the mechanism of changes in the absorptivity and to make an inference regarding the necessity of considering these changes when assessing the conditions of the laser treatment of semiconductors. Avenues for further improvement of the theoretical model are discussed.
Authors:
; ; ;  [1]
  1. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation)
Publication Date:
OSTI Identifier:
22300419
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ABSORPTIVITY; EMISSION; EXCITATION; LASERS; MONOCRYSTALS; PULSES; SEMICONDUCTOR MATERIALS; SILICON; SIMULATION