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Title: Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 80–400 K and N{sub A}{sup Ru} ≈ 9.5 × 10{sup 19}−5.7 × 10{sup 20} cm{sup −3} (x = 0–0.03), respectively. The mechanism of structural-defect generation is established, which changes the band gap and degree of compensation of the semiconductor and consists in the simultaneous concentration reduction and elimination of donor structural defects by means of the displacement of ∼1% of Ni atoms from the Hf (4a) positions, the generation of acceptor structural defects upon the substitution of Ru atoms for Ni atoms in the 4c positions, and the generation of donor defects in the form of vacancies in the Sn (4b) positions. The calculated electronic structure of HfNi{sub 1−x}Ru{sub x}Sn is consistent with the experiment. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ; ;  [3] ;  [4]
  1. National Academy of Sciences of Ukraine, Pidstrygach Institute for Applied Problems in Mechanics and Mathematics (Ukraine)
  2. Universität Wien, Institut für Physikalische Chemie (Austria)
  3. National University Lvivska Politekhnika (Ukraine)
  4. Ivan Franko National University of Lviv (Ukraine)
Publication Date:
OSTI Identifier:
22300414
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTALS; DEFECTS; DOPED MATERIALS; ELECTRONIC STRUCTURE; IMPURITIES; SEMICONDUCTOR MATERIALS