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Title: Electrical properties of diluted n- and p-Si{sub 1−x}Ge{sub x} at small x

Hall effect and conductivity measurements are taken on Si{sub 1−x}Ge{sub x} of n- and p-type at x ≤ 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1−x}Ge{sub x} and p-Si{sub 1−x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1−x}Ge{sub x} are discussed.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. Leibniz Institute for Crystal Growth (Germany)
  3. St. Petersburg Polytechnical State University (Russian Federation)
Publication Date:
OSTI Identifier:
22300413
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; BORON; ELECTRICAL PROPERTIES; HALL EFFECT; MOBILITY; PHOSPHORUS; SCATTERING