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Title: Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors

The possibilities of distinguishing highly coherent terahertz emission at a specified frequency from the incoherent thermal emission of a hot body are considered. It is experimentally shown that the smooth planar surface (with no diffraction guides) of heated GaAs and AlGaAs wafers emits directed continuous-wave (cw) terahertz radiation at coupled surface plasmon-phonon vibrational frequencies. The recording of terahertz reflectance spectra is demonstrated as a method for the identification of plasmons, optical phonons, and coupled plasmon-phonon vibrations in semiconductors.
Authors:
; ; ; ; ; ;  [1]
  1. Center for Physical Sciences and Technology, Semiconductor Physics Institute (Lithuania)
Publication Date:
OSTI Identifier:
22300412
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFRACTION; EMISSION; GALLIUM ARSENIDES; PHONONS; PLASMONS; SEMICONDUCTOR MATERIALS; SPECTRA; SURFACES