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Title: Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D2 in single-crystal silicon and in heavily boron-doped silicon nanostructures on the Si (100) surface. The angular dependence of the spectrum of the optically detected cyclotron resonance corresponds to the tensor of the electron and hole effective mass in single-crystal silicon, and the resonance-line width indicates long carrier free-path times close to 100 ps. The results obtained are discussed within the framework of the interrelation of the electron-vibration coupling to charge and spin correlations in quasi-one-dimensional chains of dangling bonds in silicon.
Authors:
; ; ; ;  [1] ;  [2]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  2. Saint Petersburg State Polytechnical University (Russian Federation)
Publication Date:
OSTI Identifier:
22300406
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CYCLOTRON RESONANCE; DISLOCATIONS; DOPED MATERIALS; EFFECTIVE MASS; MONOCRYSTALS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SILICON; SPIN; SURFACES