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Title: Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers

The effect of the hybridization of quantum states on electron transport in a two-barrier quantum well δ-doped through a spacer layer at the limit of heavy doping is shown theoretically and experimentally. A method for increasing the electron mobility in the quantum well by suppressing the tunnel coupling with the donor region through the introduction of an AlAs nanobarrier into the spacer layer is proposed. It is experimentally shown that, in the samples with a shallow quantum well, the AlAs nanobarrier introduced into the spacer layer provides a larger than threefold increase in the electron mobility at low temperatures.
Authors:
; ; ; ;  [1]
  1. National Research Nuclear University “MEPhI” (Russian Federation)
Publication Date:
OSTI Identifier:
22300404
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRON MOBILITY; QUANTUM STATES; QUANTUM WELLS