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Title: Lasing in microdisks of ultrasmall diameter

It is demonstrated by calculations and experimental results that room-temperature lasing can be obtained at the ground-state optical transition of InAs/InGaAs/GaAs quantum dots in optical microcavities with a record-small diameter of 1.5 μm. In 1-μm cavities, lasing occurs at the wavelength of one of the whispering-gallery modes within the band corresponding to the first excited-state optical transition.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. St. Petersburg Academic University—Nanotechnology Research and Education Center, Russian Academy of Sciences (Russian Federation)
  2. University of Eastern Finland, Institute of Photonics (Finland)
  3. Tampere University of Technology, Optoelectronics Research Centre (Finland)
Publication Date:
OSTI Identifier:
22300403
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; EXCITED STATES; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; LANTHANUM SELENIDES; QUANTUM DOTS; WAVELENGTHS