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Title: High-power LEDs based on InGaAsP/InP heterostructures

High-power light-emitting diodes (LEDs) with mesa diameters of 100, 200, and 300 μm are developed on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ∼45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ∼5000 A/cm{sup 2}, which makes these structures promising for the development of high-power LEDs. An emission power of ∼14 mW is obtained in the continuous-wave mode (I = 0.2 A, λ = 1.1 μm), and that of 77 mW, in the pulsed mode (I = 2 A, λ = 1.1 μm), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectively.
Authors:
 [1] ; ; ; ; ;  [2]
  1. Hungarian Academy of Sciences, Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences (Hungary)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22300400
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENT DENSITY; EMISSION; EMISSION SPECTRA; LIGHT EMITTING DIODES; PULSES; QUANTUM EFFICIENCY