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Title: Effect of annealing on the kinetic properties and band parameters of Hg{sub 1−x−y}Cd{sub x}Eu{sub y}Se semiconductor crystals

The results of studies of the kinetic properties of Hg{sub 1−x−y}Cd{sub x}Eu{sub y}Se semiconductor crystals in the ranges of temperatures T = 77–300 K and magnetic fields H = 0.5–5 kOe before and after heat treatment of the samples in Se vapors are reported. It is established that annealing of the samples in Se vapors induces a decrease in the electron concentration. From the concentration dependence of the electron effective mass at the Fermi level, the band gap, the matrix element of interband interaction, and the electron effective mass at the bottom of the conduction band are determined.
Authors:
; ;  [1]
  1. Chernivtsy National University (Ukraine)
Publication Date:
OSTI Identifier:
22300397
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 12; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AFTER-HEAT; ANNEALING; CRYSTALS; EFFECTIVE MASS; ELECTRONS; FERMI LEVEL; INTERACTIONS; MAGNETIC FIELDS; MATRIX ELEMENTS; SEMICONDUCTOR MATERIALS