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Title: Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire

The surface photovoltage method is used to study “silicon-on-sapphire” epitaxial layers with a thickness of 0.3–0.6 μm, which are used to fabricate p-channel MOS (metal—oxide-semiconductor) transistors with improved radiation hardness. It is shown that the manner in which the photoconductivity of the epitaxial layer decays after the end of a light pulse generated by a light-emitting diode (wavelength ∼400 nm) strongly depends on the density of structural defects in the bulk of the structure. This enables control over how a “silicon-on-sapphire” structure is formed to provide the manufacturing of MOS structures with optimal operating characteristics.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. National Rsearch University MIET (Russian Federation)
  2. ZAO “Telekom-STV” (Russian Federation)
  3. ZAO “Epiel” (Russian Federation)
Publication Date:
OSTI Identifier:
22300393
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 13; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; EPITAXY; LIGHT EMITTING DIODES; PHOTOCONDUCTIVITY; QUALITY CONTROL; SAPPHIRE; SEMICONDUCTOR MATERIALS; SILICON; WAVELENGTHS