skip to main content

SciTech ConnectSciTech Connect

Title: Formation of polycrystalline-silicon films with hemispherical grains for capacitor structures with increased capacitance

The effect of formation conditions on the morphology of silicon films with hemispherical grains (HSG-Si) obtained by the method of low-pressure chemical vapor deposition (LPCVD) is investigated by atomic-force microscopy. The formation conditions for HSG-Si films with a large surface area are found. The obtained HSG-Si films make it possible to fabricate capacitor structures, the electric capacitance of which is twice as large in comparison to that of capacitors with “smooth” electrodes from polycrystalline silicon.
Authors:
 [1]
  1. National Research University “MIET” (Russian Federation)
Publication Date:
OSTI Identifier:
22300392
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 48; Journal Issue: 13; Other Information: Copyright (c) 2014 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; FILMS; POLYCRYSTALS; SILICON; SURFACE AREA