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Title: Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes

We report on the tuning of the spectral response of superlattice (SL) diodes based on dilute nitride Ga(AsN) alloys by post-growth hydrogenation. Hydrogen is incorporated into the superlattice where it neutralizes the electronic activity of nitrogen by forming N-H complexes. We exploit the controlled thermal dissociation of the complexes to tune the energy of the SL photocurrent absorption and electroluminescence emission; also, by annealing a submicron spot with a focused laser beam we create a preferential path for the injection of carriers, thus activating a nanoscale light emitting region. This method can be used for fabricating planar diode arrays with distinct optical active regions, all integrated onto a single substrate.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  2. National Research Council (CNR), Institute for Photonics and Nanotechnologies (IFN-CNR), via Cineto Romano 42, 00156 Roma (Italy)
  3. Department of Electronic and Electrical Engineering, University of Sheffield, S3 3JD Sheffield (United Kingdom)
Publication Date:
OSTI Identifier:
22300302
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ANNEALING; ARSENIC COMPOUNDS; ELECTROLUMINESCENCE; GALLIUM COMPOUNDS; HYDROGEN IONS; HYDROGENATION; ION BEAMS; IRRADIATION; LASER RADIATION; NANOSTRUCTURES; NITROGEN COMPOUNDS; SPECTRAL RESPONSE; SUBSTRATES; SUPERLATTICES; TERNARY ALLOY SYSTEMS; VISIBLE RADIATION