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Title: Band alignment at interfaces of amorphous Al{sub 2}O{sub 3} with Ge{sub 1−x}Sn{sub x}- and strained Ge-based channels

Spectroscopy of internal photoemission of electrons from Ge and Ge{sub 1−x}Sn{sub x} (x ≤ 0.08) alloys into amorphous Al{sub 2}O{sub 3} is used to evaluate the energy of the semiconductor valence band top. It is found that in Ge and Ge{sub 1−x}Sn{sub x} the valence bands are aligned within the measurement accuracy (±0.05 eV) irrespective of the strain imposed on the semiconductor or by the kind of passivating inter-layer applied between the semiconductor and alumina. This indicates that the Ge{sub 1−x}Sn{sub x}-stressor approach may be useful for strain engineering in p-channel Ge metal-oxide-semiconductor transistors.
Authors:
; ; ;  [1] ; ; ; ; ;  [2] ; ;  [3]
  1. Department of Physics, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)
  2. Imec, Kapeldreef 75, B-3001 Leuven (Belgium)
  3. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22300293
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACCURACY; ALIGNMENT; ALUMINIUM OXIDES; AMORPHOUS STATE; ELECTRON EMISSION; ELECTRONS; EV RANGE; FIELD EFFECT TRANSISTORS; GERMANIUM ALLOYS; HETEROJUNCTIONS; INTERFACES; LAYERS; METALS; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRAINS; STRESSES; TIN ALLOYS; TRANSISTORS