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Title: Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga{sup +}) implantation at room temperature. Our results show that Ga{sup +} implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10{sup 3} Ω{sup −1}m{sup −1} to 1.46 × 10{sup 4} Ω{sup −1}m{sup −1} and reduces its thermal conductivity by one order of magnitude from 12.7 Wm{sup −1}K{sup −1} to 1.22 Wm{sup −1}K{sup −1} for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga{sup +} implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga{sup +} point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga{sup +}-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.
Authors:
 [1] ;  [2] ;  [2] ; ; ;  [1] ;  [3] ;  [3] ;  [2] ;  [4] ;  [3] ;  [2] ;  [5]
  1. Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China)
  2. (Singapore)
  3. Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore)
  4. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
  5. (China)
Publication Date:
OSTI Identifier:
22300286
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BINDING ENERGY; ELECTRIC CONDUCTIVITY; ELECTRONS; GALLIUM IONS; PHONONS; QUANTUM WIRES; SCATTERING; SIMULATION; THERMAL CONDUCTIVITY; WIRES; ZINC OXIDES