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Title: Impact of the GaN nanowire polarity on energy harvesting

We investigate the piezoelectric generation properties of GaN nanowires (NWs) by atomic force microscopy equipped with a Resiscope module for electrical measurements. By correlating the topography profile of the NWs with the recorded voltage peaks generated by these nanostructures in response to their deformation, we demonstrate the influence of their polarity on the rectifying behavior of the Schottky diode formed between the NWs and the electrode of measurement. These results establish that the piezo-generation mechanism crucially depends on the structural characteristics of the NWs.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Laboratoire de Photonique et de Nanostructures, CNRS-LPN-UPR20, Route de Nozay, 91460 Marcoussis (France)
  2. Laboratoire de Génie Electrique de Paris, UMR CNRS-Supélec 8507, Universités Pierre et Marie Curie et Paris-Sud, 11 rue Joliot-Curie, 91192 Gif sur Yvette (France)
Publication Date:
OSTI Identifier:
22300282
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; DEFORMATION; ELECTRIC POTENTIAL; ELECTRODES; GALLIUM NITRIDES; PIEZOELECTRICITY; QUANTUM WIRES; SCHOTTKY BARRIER DIODES NANOWIRES