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Title: Cleaning graphene with a titanium sacrificial layer

Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22300274
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; CLEANING; COPPER; DAMAGE; DEPOSITS; ELECTRON BEAMS; ELECTRONIC EQUIPMENT; EVAPORATION; FIELD EFFECT TRANSISTORS; GRAPHENE; LAYERS; PERFORMANCE; PROCESSING; RAMAN SPECTROSCOPY; RESIDUES; SURFACES; THIN FILMS; TITANIUM; X-RAY PHOTOELECTRON SPECTROSCOPY