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Title: Grain boundary barrier modification due to coupling effect of crystal polar field and water molecular dipole in ZnO-based structures

Surface water molecules induced grain boundaries (GBs) barrier modification was investigated in ZnO and ZnMgO/ZnO films. Tunable electronic transport properties of the samples by water were characterized via a field effect transistor (FET) device structure. The FETs fabricated from polar C-plane ZnO and ZnMgO/ZnO films that have lots of GBs exhibited obvious double Schottky-like current-voltage property, whereas that fabricated from nonpolar M-plane samples with GBs and ZnO bulk single-crystal had no obvious conduction modulation effects. Physically, these hallmark properties are supposed to be caused by the electrostatical coupling effect of crystal polar field and molecular dipole on GBs barrier.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)
  2. (Hong Kong)
Publication Date:
OSTI Identifier:
22300258
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; CRYSTAL FIELD; CURRENTS; DIFFUSION BARRIERS; DIPOLES; FIELD EFFECT TRANSISTORS; FILMS; GRAIN BOUNDARIES; MAGNESIUM OXIDES; MODIFICATIONS; MODULATION; MOLECULES; MONOCRYSTALS; SURFACES; ZINC OXIDES