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Title: Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction

In this study, we demonstrate the avalanche multiplication phenomenon in a crystalline-selenium (c-Se)-based heterojunction photodiode. The carrier injection from an external electrode, which is considered to be the major factor contributing to dark current at a high electric field, was significantly decreased by employing a thin n-type Ga{sub 2}O{sub 3} layer with a high hole-injection barrier. The fabricated Ga{sub 2}O{sub 3}/c-Se diode exhibited extremely high external quantum efficiency of over 100% in the short-wavelength region at a relatively low reverse-bias voltage of ∼20 V. Furthermore, Sn-doping of the Ga{sub 2}O{sub 3} layer increases the carrier concentration; hence, the resulting device has a lower threshold voltage for avalanche multiplication.
Authors:
; ; ; ;  [1]
  1. NHK Science and Technology Research Laboratories, Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan)
Publication Date:
OSTI Identifier:
22300255
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CURRENTS; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; EQUIPMENT; GALLIUM OXIDES; HETEROJUNCTIONS; INJECTION; LAYERS; QUANTUM EFFICIENCY; SELENIUM; TIN ADDITIONS; TOWNSEND DISCHARGE; WAVELENGTHS