skip to main content

Title: MoS{sub 2} nanotube field effect transistors

We report on electric field effects on electron transport in multi-walled MoS{sub 2} nanotubes (NTs), fabricated using a two-step synthesis method from Mo{sub 6}S{sub x}I{sub 9-x} nanowire bundle precursors. Transport properties were measured on 20 single nanotube field effect transistor (FET) devices, and compared with MoS{sub 2} layered crystal devices prepared using identical fabrication techniques. The NTs exhibited mobilities of up to 0.014 cm{sup 2}V{sup −1}s{sup −1} and an on/off ratio of up to 60. As such they are comparable with previously reported WS{sub 2} nanotube FETs, but materials defects and imperfections apparently limit their performance compared with multilayer MoS{sub 2} FETs with similar number of layers.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [2]
  1. Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia)
  2. (Slovenia)
Publication Date:
OSTI Identifier:
22300246
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEFECTS; ELECTRIC FIELDS; FABRICATION; FIELD EFFECT TRANSISTORS; LAYERS; MOLYBDENUM SULFIDES; NANOTUBES; SYNTHESIS; TUNGSTEN SULFIDES