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Title: Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

We investigate the role of growth temperature on the optimization of lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN heterostructure and its structural evolutions along with electrical transport studies. The indium content gradually reduces with the increase of growth temperature and approaches lattice-matched with GaN having very smooth and high structural quality at 450ºC. The InAlN layers grown at high growth temperature (480ºC) retain very low Indium content of ∼ 4 % in which cracks are mushroomed due to tensile strain while above lattice matched (>17%) layers maintain crack-free compressive strain nature. The near lattice-matched heterostructure demonstrate a strong carrier confinement with very high two-dimensional sheet carrier density of ∼2.9 × 10{sup 13} cm{sup −2} with the sheet resistance of ∼450 Ω/□ at room temperature as due to the manifestation of spontaneous polarization charge differences between InAlN and GaN layers.
Authors:
 [1] ;  [2]
  1. Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli-620 024, Tamil Nadu (India)
  2. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan. (Japan)
Publication Date:
OSTI Identifier:
22300245
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRACKS; GALLIUM NITRIDES; INDIUM; LAYERS; MOLECULAR BEAM EPITAXY; PLASMA; POLARIZATION; STRAINS