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Title: Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm{sup 2}. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO{sub 2}.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, D-52074 Aachen (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22300221
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; DEPOSITION; DOPED MATERIALS; ELECTRODES; FERROELECTRIC MATERIALS; FILMS; HAFNIUM OXIDES; LAYERS; ORTHORHOMBIC LATTICES; PIEZOELECTRICITY; PLATINUM; POLARIZATION; SOLUTIONS; THICKNESS; YTTRIUM ADDITIONS