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Title: The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack

The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al{sub 2}O{sub 3}/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Materials Engineering, Technion–Israel Institute of Technology, Haifa 32000 (Israel)
  2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22300216
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; DEPOSITION; DIFFUSION; EV RANGE; EXTRACTION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM COMPOUNDS; STACKS; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY