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Title: Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

Abstract

A high-quality high-κ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high κ dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5 Å to 1 Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high κ dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-κ/Ge interface using the Ge epi-layer approach.

Authors:
 [1]; ; ; ; ;  [2]
  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
Publication Date:
OSTI Identifier:
22300215
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BEAMS; CAPACITANCE; CRYSTAL GROWTH; DEPOSITION; DIELECTRIC MATERIALS; EPITAXY; GERMANIUM; INTERFACES; LAYERS; MOLECULES; OXIDES; PASSIVATION; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACES; TRAPS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Chu, R. L., Liu, Y. C., Lee, W. C., Huang, M. L., Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, Lin, T. D., Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, and Pi, T. W. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100). United States: N. p., 2014. Web. doi:10.1063/1.4879022.
Chu, R. L., Liu, Y. C., Lee, W. C., Huang, M. L., Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, Lin, T. D., Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, & Pi, T. W. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100). United States. https://doi.org/10.1063/1.4879022
Chu, R. L., Liu, Y. C., Lee, W. C., Huang, M. L., Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, Lin, T. D., Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, and Pi, T. W. 2014. "Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)". United States. https://doi.org/10.1063/1.4879022.
@article{osti_22300215,
title = {Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)},
author = {Chu, R. L. and Liu, Y. C. and Lee, W. C. and Huang, M. L. and Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw and Lin, T. D. and Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw and Pi, T. W.},
abstractNote = {A high-quality high-κ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high κ dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5 Å to 1 Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high κ dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-κ/Ge interface using the Ge epi-layer approach.},
doi = {10.1063/1.4879022},
url = {https://www.osti.gov/biblio/22300215}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 104,
place = {United States},
year = {Mon May 19 00:00:00 EDT 2014},
month = {Mon May 19 00:00:00 EDT 2014}
}