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Title: Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

A high-quality high-κ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high κ dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5 Å to 1 Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high κ dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-κ/Ge interface using the Ge epi-layer approach.
Authors:
 [1] ; ; ; ;  [2] ; ;  [3] ;  [4]
  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  3. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  4. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
Publication Date:
OSTI Identifier:
22300215
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BEAMS; CAPACITANCE; CRYSTAL GROWTH; DEPOSITION; DIELECTRIC MATERIALS; EPITAXY; GERMANIUM; INTERFACES; LAYERS; MOLECULES; OXIDES; PASSIVATION; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACES; TRAPS; X-RAY PHOTOELECTRON SPECTROSCOPY