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Title: Surface and electronic structure of epitaxial PtLuSb (001) thin films

The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [1] ;  [5]
  1. Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)
  2. Department of Electrical and Computer Engineering, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)
  3. MAX IV Laboratory, Lund University, Lund 221 00 (Sweden)
  4. Department of Physics, Lund University, Lund 221 00 (Sweden)
  5. (United States)
Publication Date:
OSTI Identifier:
22300214
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY COMPOUNDS; CARRIERS; ELECTRONIC STRUCTURE; FERMI LEVEL; HALL EFFECT; LUTETIUM COMPOUNDS; METALS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PHOTOEMISSION; PLATINUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SURFACE PROPERTIES; TEMPERATURE DEPENDENCE; THIN FILMS; TUNNEL EFFECT