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Title: Indium arsenide nanowire field-effect transistors for pH and biological sensing

Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H{sup +} ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.
Authors:
; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Center for Quantum Devices and Nanoscience Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)
  2. Bio-Nanotechnology and Nanomedicine Laboratory, Department of Chemistry and Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)
  3. Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)
Publication Date:
OSTI Identifier:
22300201
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; AVIDIN; CARRIER MOBILITY; ELECTRIC CONTACTS; FIELD EFFECT TRANSISTORS; HYDROGEN IONS 1 PLUS; INDIUM ARSENIDES; LAYERS; PH VALUE; SEMICONDUCTOR MATERIALS; SENSITIVITY; SENSORS; SOLUTIONS; SURFACES NANOWIRES