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Title: Erratum: “Inverse spin Hall effect induced by spin pumping into semiconducting ZnO” [Appl. Phys. Lett. 104, 052401 (2014)]

No abstract prepared.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [4] ;  [3] ;  [5] ;  [1] ;  [3]
  1. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
  2. Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)
  3. (China)
  4. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)
  5. Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China)
Publication Date:
OSTI Identifier:
22300187
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; HALL EFFECT; PUMPING; SEMICONDUCTOR MATERIALS; SPIN; ZINC OXIDES