skip to main content

SciTech ConnectSciTech Connect

Title: Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202{sup ¯}1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

No abstract prepared.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ; ; ; ; ;  [1] ; ;  [5] ;  [1] ;  [4] ;  [6] ; ;  [7]
  1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
  2. (Poland)
  3. TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland)
  4. (Germany)
  5. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  6. Ammono S.A., Czerwonego Krzyża 2/31, 00-377 Warsaw (Poland)
  7. Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)
Publication Date:
OSTI Identifier:
22300186
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PLASMA; SUBSTRATES; ULTRAVIOLET RADIATION