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Title: Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Sensors and Electron Devices Directorate, US Army Research Laboratory, Adelphi, Maryland 20723 (United States)
  2. Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005 (United States)
Publication Date:
OSTI Identifier:
22300184
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; EQUIPMENT; FIELD EFFECT TRANSISTORS; GRAPHENE; MOLYBDENUM SULFIDES; SEMICONDUCTOR MATERIALS; SILICON OXIDES; STRAINS; SUBSTRATES; TEMPERATURE DEPENDENCE