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Title: Graphene in ohmic contact for both n-GaN and p-GaN

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.
Authors:
; ; ; ; ;  [1] ; ; ;  [1] ;  [2]
  1. Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22300168
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; DENSITY FUNCTIONAL METHOD; ELECTRODES; FERMI LEVEL; GALLIUM NITRIDES; GRAPHENE; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SEMICONDUCTOR DEVICES; WORK FUNCTIONS