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Title: Role of electron carriers on local surface plasmon resonances in doped oxide semiconductor nanocrystals

Optical properties of carrier-dependent local surface plasmons (LSPs) were studied using dopant-controlled In{sub 2}O{sub 3}:Sn nanocrystals (NCs). From a systematic correlation between LSP excitations and electron carriers, electron-impurity scattering contributed towards plasmon damping as one of a factor that is absent in metal NCs. A threshold electron density (n{sub e}) from a damping dominated regime to a quenched damping regime appeared at around 10{sup 20} cm{sup −3}. The validity of Mie theory failed in ITO NCs with high n{sub e} greater than 10{sup 20} cm{sup −3} since the role of electron carriers could enhance LSPs with simultaneous damped plasmonic excitations, which is valuable information for optical applications.
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Bioengineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  2. (Japan)
  3. Tomoe Works Co., Ltd, Minato-ku, Osaka 552-0001 (Japan)
Publication Date:
OSTI Identifier:
22300167
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIERS; CORRELATIONS; DAMPING; DOPED MATERIALS; ELECTRON DENSITY; ELECTRONS; EXCITATION; IMPURITIES; INDIUM OXIDES; METALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PLASMONS; RESONANCE; SCATTERING; SEMICONDUCTOR MATERIALS; SURFACES; TIN ADDITIONS